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| NTE5728 Powerblock Module Description: The NTE5728 uses high voltage power thyristors/diodes and is electrically isolated from the metal base, allowing common heatsinks and compact assemblies to be built. This device is intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required. Features: D High Voltage D Electrically Isolated Base Plate D 3000VRMS Isolating Voltage D High Surge Capability D Large Creepage Distances Ratings and Characteristics: Average Forward Current (TC = +85C, 180 Conduction, Half Sine Wave), IF(AV) . . . . . . . . . . 250A Maximum RMS On-State Current (As AC Switch), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555A Maximum Repetitive Peak Reverse and Off-State Blocking Voltage, VRRM, VDRM . . . . . . . . 1600V Maximum Non-Repetitive Peak Reverse Voltage, VRSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Maximum Peak Reverse and Off-State Leakage Current (TJ = +130C), IRRM, IDRM . . . . . . 50mA RMS Isolation Voltage (50Hz, Circuit to Base, All Terminals Shorted, t = 1s), VISO . . . . . . . . 3000V Critical Rate of Rise of Off-State Voltage (TJ = +130C), dv/dt (Linear to 80% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/s (Linear to 67% Rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000V/s Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +130C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case (Per Junction, DC Operation), RthJC . . . . . . . . . 0.125C/W Thermal Resistance, Case-to-Sink (Per Module, Note 1), RthCS . . . . . . . . . . . . . . . . . . . . 0.02C/W Note 1. Mounting surface flat, smooth and greased. Electrical Specifications: Parameter Maximum Peak One-Cycle Non-Repetitive Surge Current Symbol IFSM t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2t for Fusing I2t t = 10ms t = 8.3ms t = 10ms t = 8.3ms Maximum I2pt Threshold Voltage, Low level Threshold Voltage, High level On-State Slope Resistance, Low Level On-State Slope Resistance, High Level Maximum On-State Voltage Drop Maximum Holding Current Maximum Latching Current Maximum Peak Gate Power Maximum Average Gate Power Maximum Peak Gate Current Maximum Peak Negative Gate Voltage Maximum Required DC Gate Trigger Voltage to Trigger I2pt VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL PGM PG(AV) +IGM -VGT VGT Test Conditions Sinusoidal Half Wave, 100% VRRM Reapplied, Initial TJ = +130C Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +130C Sinusoidal Half Wave, 100% VRRM Reapplied, Initial TJ = +130C Sinusoidal Half Wave, No Voltage Reapplied, Initial TJ = +130C Rating 7150 7500 8500 8900 255 233 361 330 3610 0.97 1.00 0.60 0.57 1.44 500 1000 10 2.0 3.0 5.0 4.0 3.0 2.0 Anode Supply = 12V, Resistive Load: RA = 1 350 200 100 0.25 10 500 1.0 2.0 Unit A A A A A2s A2s A2s A2s A2pt V V m m V mA mA W W A V V V V mA mA mA V mA A/s s s s t = 0.1 to 10ms, no voltage reapplied TJ = +130C, (16.7% x x IT(AV) < I < x IT(AV)) TJ = +130C, ( x IT(AV) < I < 20 x x IT(AV)) TJ = +130C, (16.7% x x IT(AV) < I < x IT(AV)) TJ = +130C, ( x IT(AV) < I < 20 x x IT(AV)) TJ = +130C, ITM = x IT(AV), 180 Condition, Av. Power = VT(TO) x IT(AV) + rt x (IT(RMS))2 Anode Supply = 12V, Initial IT = 30A, TJ = +25C Anode Supply = 12V, Resistive Load = 1, Gat Pulse: 10V, 100s, TJ = +25C TJ = +130C, tp 5ms TJ = +130C, f = 50Hz TJ = +130C, tp 5ms TJ = +130C, tp 5ms TJ = -40C TJ = +25C TJ = +130C Anode Supply = 12V, Resistive Load: RA = 1 Maximum Required DC Gate Trigger Current to Trigger IGT TJ = -40C TJ = +25C TJ = +130C Maximum Gate Voltage that will not Trigger Maximum Gate Current that will not Trigger Maximum Rate of Rise of Turned-On Current Typical Delay Time Typical Rise Time Typical Turn-Off Time VGD IGD di/dt td tr tq TJ = +130C, Rated VDRM Applied TJ = +130C, Rated VDRM Applied TJ = +130C, ITM = 400A, Rated VDRM Applied TJ = +25C, Gate Current = 1A diG/dt = 1A/s, VD = 0.67% VDRM TJ = +25C, ITM = 300A, -dI/dt = 15A/s, VR = 50V, 50-150 dV/dt = 20V/s, Gate 0V, 100 Circuit Diagram G2 K2 AC + - K1 G1 K2 + AC - K1 G2 G1 .980 (25.0) .244 (6.2) Dia (2 Places) .980 (25.0) 1.340 (34.0) .270 (7.0) M6 x 1 Screw (3 Places) 3.150 (80.0) 1.180 (30.0) 1.850 (47.0) 3.700 (94.0) NOTE: Can be used with Heat Sink NTE441A |
Price & Availability of NTE5728
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